? semiconductor components industries, llc, 2013 september, 2013 ? rev. 3 1 publication order number: nss1c301e/d nss1c301et4g 100 v, 3.0 a, low v ce(sat) npn transistor on semiconductor?s e 2 poweredge family of low v ce(sat) transistors are surface mount devices featuring ultra low saturation voltage (v ce(sat) ) and high current gain capability. these are designed for use in low voltage, high speed switching applications where affordable efficient energy control is important. typical applications are dc?dc converters and power management in portable and battery powered products such as cellular and cordless phones, pdas, computers, printers, digital cameras and mp3 players. other applications are low voltage motor controls in mass storage products such as disc drives and tape drives. in the automotive industry they can be used in air bag deployment and in the instrument cluster. the high current gain allows e 2 poweredge devices to be driven directly from pmu?s control outputs, and the linear gain (beta) makes them ideal components in analog amplifiers. features ? complement to nss1c300et4g ? nsv prefix for automotive and other applications requiring unique site and control change requirements; aec?q101 qualified and ppap capable ? these devices are pb?free and are rohs compliant maximum ratings (t a = 25 c) rating symbol max unit collector?base voltage v cbo 140 vdc collector?emitter voltage v ceo 100 vdc emitter?base voltage v eb 6.0 vdc collector current ? continuous i c 3.0 adc collector current ? peak i cm 6.0 adc base current i b 0.5 adc total power dissipation @ t c = 25 c derate above 25 c p d 33 0.26 w w/ c total power dissipation (note 1) @ t a = 25 c derate above 25 c p d 2.1 0.017 w w/ c operating and storage junction temperature range t j , t stg ?65 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. these ratings are applicable when surface mounted on the minimum pad sizes recommended. http://onsemi.com 100 volts, 3.0 amps 12.5 watts npn low v ce(sat) transistor dpak case 369c style 1 1 2 3 4 marking diagram y = year ww = work week 1c31e = device code g = pb?free yww 1c31eg collector 2, 4 1 base 3 emitter device package shipping ? ordering information nss1c301et4g dpak (pb?free) 2500/ tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. NSV1C301ET4G dpak (pb?free) 2500/ tape & reel
nss1c301et4g http://onsemi.com 2 thermal characteristics characteristic symbol max unit thermal resistance, junction?to?case r jc 3.8 c/w thermal resistance, junction?to?ambient (note 2) r ja 59.5 c/w 2. these ratings are applicable when surface mounted on the minimum pad sizes recommended. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collector ?emitter breakdown voltage (i c = 10 ma, i b = 0) v (br)ceo 100 ? ? v collector ?base breakdown voltage (i c = 0.1 ma, i e = 0) v (br)cbo 140 ? ? v emitter ?base breakdown voltage (i e = 0.1 ma, i c = 0) v (br)ebo 6.0 ? ? v collector cutoff current (v cb = 140 v, i e = 0) i cbo ? ? 0.1 a emitter cutoff current (v eb = 6.0 v) i ebo ? ? 0.1 a on characteristics dc current gain (note 3) (i c = 0.1 a, v ce = 2.0 v) (i c = 0.5 a, v ce = 2.0 v) (i c = 1.0 a, v ce = 2.0 v) (i c = 3.0 a, v ce = 2.0 v) h fe 200 200 120 80 ? ? ? ? ? ? 360 ? ? collector ?emitter saturation voltage (note 3) (i c = 0.1 a, i b = 10 ma) (i c = 1.0 a, i b = 0.100 a) (i c = 2.0 a, i b = 0.200 a) (i c = 3.0 a, i b = 0.300 a) v ce(sat) ? ? ? ? 0.015 0.045 0.080 0.115 0.050 0.090 0.150 0.250 v base ?emitter saturation voltage (note 3) (i c = 1.0 a, i b = 0.1 a) v be(sat) ? ? 1.0 v base ?emitter turn?on voltage (note 3) (i c = 1.0 a, v ce = 2.0 v) v be(on) ? ? 0.90 v cutoff frequency (i c = 500 ma, v ce = 10 v, f = 100 mhz) f t ? 120 ? mhz input capacitance (v eb = 5.0 v, f = 1.0 mhz) cibo ? 360 ? pf output capacitance (v cb = 10 v, f = 1.0 mhz) cobo ? 30 ? pf 3. pulsed condition: pulse width = 300 msec, duty cycle 2%.
nss1c301et4g http://onsemi.com 3 typical characteristics figure 1. dc current gain figure 2. dc current gain i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0 50 150 200 300 350 450 500 10 1 0.1 0.01 0 0.1 0.2 0.3 0.4 figure 3. collector?emitter saturation voltage figure 4. collector?emitter saturation voltage i c , collector current (a) 10 1 0.1 0.01 0 0.1 0.2 0.3 0.4 figure 5. base?emitter saturation voltage figure 6. base?emitter ?on? voltage i c , collector current (a) i c , collector current (a) 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 10 1 0.1 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 h fe , dc current gain v be(on) , base?emitter on voltage (v) 100 250 400 v ce = 2 v 150 c 25 c ?55 c 150 c 25 c ?55 c ic/ib = 10 i c , collector current (a) 10 1 0.1 0.01 0 50 150 200 300 350 450 500 h fe , dc current gain 100 250 400 v ce = 5 v 150 c 25 c ?55 c 150 c 25 c ?55 c ic/ib = 50 150 c 25 c ?55 c ic/ib = 10 v ce = 2 v 150 c 25 c ?55 c v ce(sat) , collector?emitter saturation voltage (v) v ce(sat) , collector?emitter saturation voltage (v) v be(sat) , base?emitter saturation voltage (v)
nss1c301et4g http://onsemi.com 4 typical characteristics figure 7. collector saturation region figure 8. capacitance i b , base current (ma) v r , reverse voltage (v) 10,000 1,000 100 10 1 0.1 0 0.2 0.4 0.6 1.0 1.2 1.4 1.6 100 10 1 0.1 10 100 1,000 figure 9. current?gain?bandwidth product figure 10. safe operating area i c , collector current (ma) v ce , collector emitter voltage (v) 10 1 0.1 0.01 10 100 1,000 100 10 1 0.01 0.1 1 10 v ce , collector?emitter voltage (v) c, capacitance (pf) f t , current?gain?bandwidth product (mhz) i c , collector current (a) 0.8 t a = 25 c i c = 0.1 a i c = 0.5 a i c = 1 a i c = 2 a i c = 3 a cib cob v ce = 5 v 1.0 sec 10 msec 100 msec figure 11. typical transient thermal response, junction?to?case t, pulse time (s) r(t), transient thermal response ( c/w) d = 0.5 0.1 0.05 0.01 single pulse 0.2 0.02 0.01 0.1 1 10 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 r jc(t) = r(t) r jc r jc = 3.8 c/w d curves apply for power pulse train shown read time at t 1 t j(pk) - t c = p (pk) jc(t) p (pk) t 1 t 2 duty cycle, d = t 1 /t 2
nss1c301et4g http://onsemi.com 5 package dimensions dpak (single gauge) case 369c issue d style 1: pin 1. base 2. collector 3. emitter 4. collector b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distribut ors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 nss1c301e/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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